Ambipolar Behavior of Ge-Intercalated Graphene: Interfacial Dynamics and Possible Applications

For the realization of graphene-based electronic and optic devices, functionalization this material becomes essential. Graphene doping through intercalation tuning chemical potential is one among other promising concepts. Intercalation germanium particularly interesting in view its ambipolar behavior. Both p- n-type doped graphene their levels were identified by x-ray photoelectron emission microscopy (XPEEM), low-energy electron (LEEM), angle-resolved photoemission microspectroscopy (μ-ARPES). The absolute amount intercalated Ge was determined to be roughly 1 ML 2 MLs for n- p-phases, respectively. samples present study, we utilized transition from via a mix phase after high temperature annealing. Concrete implementation mutual distribution n-phases depends on temperature, mobility atoms second layer, cooling/heating protocol, can nicely followed live microscope (LEEM) during heating/cooling below 500°C. process has significant hysteresis, which an indication first-order transition. enhanced diffusion layer suitable tailoring ultrashort junction lengths so that pseudo-spin mismatch used future Another application utilize negative relative refractive index at p–n boundary find possible applications focusing optics.